Control of magnetization reversal in ferromagnetic semiconductors by electrical means

Journal of Physics Condensed Matter

Volumn 16, Issue 48, 2004, Pages

  Chiba, Daichi ^a,b   Yamanouchi, Michihiko ^b   Matsukura, Fumihiro ^a,b   Ohno, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COERCIVE FORCE; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRODES; FERROMAGNETIC MATERIALS; FIELD EFFECT TRANSISTORS; HALL EFFECT; HYSTERESIS; MAGNETIC DOMAINS; MAGNETIC FIELDS; MAGNETIZATION; SEMICONDUCTOR MATERIALS;

ARROTT PLOTS; CURIE POINT; HOLE CONCENTRATION; MAGNETIZATION REVERSAL;

MAGNETIC SEMICONDUCTORS;

EID: 10444263065     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/48/029     Document Type: Conference Paper

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