Effects of post-annealing on thermoelectric properties of p-type CoSb 3 grown by the vertical Bridgman method

Journal of Alloys and Compounds

Volumn 386, Issue 1-2, 2005, Pages 228-233

  Akasaka, M ^a   Iida, T ^a   Sakuragi, G ^a   Furuyama, S ^a   Noda, M ^a   Matsui, S ^a   Ota, M ^a   Suzuki, H ^a   Sato, H ^a   Takanashi, Y ^a   Sakuragi, S ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b Union Material Inc   (Japan)

Author keywords

CoSb3; Crystal growth; Semiconductor; Skutterudite; Thermoelectric material

Indexed keywords

ANNEALING; ANTIMONY; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

BRIDGMAN METHOD; COSB3; SKUTTERUDITE; THERMOELECTRIC MATERIALS;

COBALT COMPOUNDS;

EID: 10444248268     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.04.144     Document Type: Article

References (9)

1. D. Mandrus, A. Migliori, T.W. Darling, M.F. Hundley, E.J. Peterson, J.D. Thomson, Phys. Rev. B 52 (1995) 4926-4931.
2. D.T. Morelli, T. Caillat, J.-P. Fleurial, A. Borshchevsky, J. Vandersande, B. Chen, C. Uher, Phys. Rev. B 51 (1995) 9622-9628.
3. T. Caillat, J.-P. Fleurial, A. Borshchevsky, J. Cryst. Growth 166 (1996) 722-726.
4. H. Anno, K. Matsubara, Recent Res. Devel. Appl. Phys. 3 (2000) 47-61.
5. T. Caillat, A. Borshchevsky, J.-P. Fleurial, J. Appl. Phys. 80 (1996) 4442-4449.
6. H. Anno, T. Sakakibara, Y. Notohara, H. Tashiro, T. Koyanagi, H. Kaneko, K. Matsubara, Proceedings of the 16th International Conference on Thermoelectrics, vol. 338-342, 1997.
7. H. Nakagawa, H. Tanaka, A. Kasama, H. Anno, K. Matsubara, Proceedings of the 16th International Conference on Thermoelectrics, vol. 351-355, 1997.
8. K. Ishiba, T. Nishizawa, in: T.B. Massalski (Ed.), Binary Alloy Phase Diagrams, 2nd ed., 1990, pp. 1234-1236.
9. D.J. Singh, W.E. Pickett, Phys. Rev. B 50 (1994) 11235-11238.