Bridgman-solution crystal growth and characterization of the skutterudite compounds CoSb3 and RhSb3

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 722-726

  Caillat, T ^a   Fleurial, J P ^a   Borshchevsky, A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; HALL EFFECT; SINGLE CRYSTALS; THERMOELECTRICITY;

P TYPE HALL MOBILITY; VERTICAL GRADIENT FREEZE TECHNIQUE;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 0030230737     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00478-5     Document Type: Article

References (10)

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