A novel electrical test by C-AFM to differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short defect in real products

Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004

Volumn , Issue , 2004, Pages 491-497

  Lin, Cheng Piao ^a   Wu, Cheng Hsu ^a   Ting, Cheng Chun ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MOS DEVICES; SCANNING ELECTRON MICROSCOPY; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

CONDUCTING-ATOMIC FORCE MICROSCOPY (C-AFM); GATE-TO-SOURCE/DRAIN (S/D) GATE OXIDE SHORTS (GOS); PASSIVE VOLTAGE CONTRAST (PVC); TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

FAILURE ANALYSIS;

EID: 10444232072     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Abdullah Yassine, Karsten Wieczorek, Kola Olasupo, and Volker Heinig "A Novel Electrical Test to Differentiate Gate-to-Sourse/Drain Suicide Short form Gate Oxide Short" IRW final report 2000 IEEE, pp. 90 - 94.
2. Jon C Lee, J H Chuang "Fault Localization in Contact Level by Using Conductive Atomic Microscopy" International Symposium for Testing and Failure Analysis, 2003, pp413-418.
3. E.Wu, E. Nowak, J.Aitken, W. Abadeer,L.K. Han, and S. LO. "Structure Dependence of Dielectric Breakdown in Ultra-Thin Gate Oxides and Its Relationship to Soft Breakdown Modes and Device Failure" IEDM 1998, pp. 187-190