Ab initio calculations of interface effects in tunnelling through MgO barriers on Fe(100)

Journal of Physics Condensed Matter

Volumn 16, Issue 48, 2004, Pages

  Wortmann, D ^a,b   Bihlmayer, G ^b   Blugel S ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; FERMI LEVEL; INTERFACES (MATERIALS); LIGHT POLARIZATION; MAGNESIA; MONOLAYERS; PROBABILITY DENSITY FUNCTION; TUNNEL JUNCTIONS;

LANDAUER EQUATION; METAL-INSULATOR INTERFACE; SPIN POLARIZATION; TUNNEL-MAGNETO-RESISTANCE (TMR);

MAGNETORESISTANCE;

EID: 10444229609     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/48/056     Document Type: Conference Paper

References (8)

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