Optical transitions and interface structure in (GaP)m/(AlP) n modulated period superlattices

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 1, 2004, Pages 131-142

  Soni, R K ^a   Tripathy, S ^a,c   Asahi, H ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b OSAKA UNIVERSITY   (Japan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

GaP AlP superlattice; Photoluminescence; Raman scattering

Indexed keywords

ELECTRON TRANSITIONS; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PERTURBATION TECHNIQUES; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING;

ALP; GAP; OPTICAL TRANSITION;

SEMICONDUCTOR SUPERLATTICES;

EID: 1042292708     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.10.004     Document Type: Article

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