Photoluminescence from bound exciton states in GaP/AlP short period superlattices in a strong magnetic field

Solid State Communications

Volumn 109, Issue 9, 1999, Pages 583-588

  Kobayashi, Y ^a   Kouzu, K ^a   Kamimura, H ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A. Semiconductors; D. Electronic states (localized); D. Optical properties; D. Recombination and trapping; E. Luminescence

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; COMPUTATIONAL METHODS; ELECTRON TRAPS; EXCITONS; HOLE TRAPS; MAGNETIC FIELD EFFECTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; VARIATIONAL TECHNIQUES;

ALUMINUM PHOSPHIDE; GALLIUM PHOSPHIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0039134130     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00611-5     Document Type: Article

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