A high performance unilateral 900 MHz LNA with simultaneous noise, impedance, and IP3 match

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 45-48

  Van Der Heijden, M P ^a   De Vreede, L C N ^a   Van Straten, F ^b   Burghartz, J N ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC NETWORK TOPOLOGY; SPURIOUS SIGNAL NOISE;

CURRENT-FEEDBACK TOPOLOGY; LOW NOISE AMPLIFIERS; SILICON BIPOLAR JUNCTION TRANSISTOR;

AMPLIFIERS (ELECTRONIC);

EID: 1042289141     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274932     Document Type: Conference Paper

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