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Volumn 38, Issue 12, 2002, Pages 536-538
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Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDWIDTH;
COMPUTER SIMULATION;
HETEROJUNCTION BIPOLAR TRANSISTORS;
OPTIMIZATION;
POLARIZATION;
SEMICONDUCTING SILICON COMPOUNDS;
SPURIOUS SIGNAL NOISE;
TRANSCONDUCTANCE;
LOW NOISE AMPLIFIER (LNA) STRUCTURES;
NOISE FIGURE (NF);
AMPLIFIERS (ELECTRONIC);
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EID: 0037030543
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:20020393 Document Type: Article |
Times cited : (8)
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References (6)
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