Theoretical model for viscoelastic sliding of interfaces and creep behavior of anion-doped Si3N4/SiC composites

Journal of the Ceramic Society of Japan

Volumn 105, Issue 1, 1997, Pages 1-5

  Pezzotti, Giuseppe ^a   Ota, Ken'ichi ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Anion dopant; Composite; Interface sliding; Silicon nitride

Indexed keywords

CHEMICAL MODIFICATION; CREEP; DOPING (ADDITIVES); FILMS; INTERFACES (MATERIALS); INTERNAL FRICTION; IONS; MATHEMATICAL MODELS; MECHANICAL VARIABLES MEASUREMENT; REFRACTORY MATERIALS; SHEAR STRESS; VISCOSITY;

ANION DOPED COMPOSITES; GLASS NETWORK MODIFIER IONS; MICROMECHANICAL RESPONSE; MICROSCOPIC INTERFACE VISCOSITY PARAMETER; REFRACTORY CERAMICS; SHORT TERM MICROSCOPIC CREEP BEHAVIOR; VISCOELASTIC SLIDING;

CERAMIC MATRIX COMPOSITES;

EID: 1042281921     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.105.1     Document Type: Article

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