Coupling of atom-by-atom calculations of extended defects with B kick-out equations: Application to the simulation of boron ted

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 95-99

  Lampin, E ^a   Cristiano, F ^b   Lamrani, Y ^b   Colombeau, B ^c  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b LAAS CNRS   (France)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Boron TED; Extended defects; Simulation

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DIFFUSION; ION IMPLANTATION; MATHEMATICAL MODELS; SHRINKAGE; SILICON WAFERS; SUPERSATURATION;

BORON TRANSIENT ENHANCED DEFECTS; EXTENDED DEFECTS;

CRYSTAL DEFECTS;

EID: 1042277330     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.026     Document Type: Conference Paper

References (9)

1. Fahey P.M., Griffin P.B., Plummer J.D. Rev. Mod. Phys. 61:1989;289.
2. Claverie A., Colombeau B., de Mauduit B., Bonafos C., Hebras X., Ben Assayag G., Cristiano F. Appl. Phys. A. 76:2003;1025.
3. B. Colombeau, Ph.D. thesis, Toulouse, France, 2001.
4. Cristiano F., Grisolia J., Colombeau B., Omri M., de Mauduit B., Claverie A., Giles L.F., Cowern N.E.B. J. Appl. Phys. 87:2000;8420.
5. Colombeau B., Cristiano F., Altibelli A., Bonafos C., Ben Assayag G., Claverie A. Appl. Phys. Lett. 78:2001;940.
6. Eaglesham D.J., Stolk P.A., Gossmann H.J., Poate J.M. Appl. Phys. Lett. 65:1994;2305.
7. Baccus B., Vandenbossche E. Defect Diffus. Forum. 115-116:1994;55.
8. E. Lampin, F. Cristiano, Y. Lamrani, A. Claverie, B. Colombeau, N.E.B. Cowern, J. Appl. Phys., to be published.
9. Cowern N.E.B., Alquier D., Omri M., Claverie A. Nucl. Instr. and Meth. B. 148:1999;257.