Simple energy spike model for paracrystalline silicon in ion implantation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2306-2310

  Cheng, Ju Yin ^a   Gibson, J M ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; CRYSTALLIZATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SINGLE CRYSTALS; SOLIDIFICATION; VACUUM APPLICATIONS;

CRYSTALLITES; ENERGY SPIKE MODELS; PARACRYSTALLINE SILICON; STRUCTURAL DISORDER;

ION IMPLANTATION;

EID: 10244251664     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1795829     Document Type: Article

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