High-power blue-violet laser diodes for next-generation optical disc systems

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5380, Issue , 2004, Pages 411-416

  Shono, Masayuki ^a   Nomura, Yasuhiko ^a   Bessho, Yasuyuki ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Blue violet laser diode; Far field pattern; High power; Kink level; Low noise; Nitride based semiconductor

Indexed keywords

ACOUSTIC NOISE; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL DISK STORAGE; OPTIMIZATION; PHOTOLITHOGRAPHY; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

BLUE-VIOLET LASER DIODES; FAR FIELD PATTERN; HIGH POWER; KINK LEVEL; LOW NOISE; NITRIDE-BASED SEMICONDUCTORS;

SEMICONDUCTOR LASERS;

EID: 10044296414     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.562510     Document Type: Conference Paper

References (5)

1. T. Nishihara, H. Kitamura, R. Kojima, N. Miyagawa, T. Akiyama, K. Nishiuchi and N. Yamada, "Rewritable 2x-Speed Dual Layer Blu-Ray Disc", Tech. Digest of Int. Symp. on Optical Memory 2003, Tomoyuki Toshima, pp. 8-9, c/o Business Center for Academic Societies Japan, Nara, 2003.
2. T. Nakai, T. Tsukamoto, S. Ashida, K. Yusu, K. Ichihara, N. Yoshida, N. Ohmachi, N. Morishita and N. Nakamura, "Dual-Layer Phase Change Recording Media for System with NA of 0.65 and Light Incidence on 0.6 mm Thick-Substrate", Tech. Digest of Int. Symp. on Optical Memory 2003, Tomoyuki Toshima, pp. 14-15, c/o Business Center for Academic Societies Japan, Nara, 2003.
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho, "InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on An Epitaxially Laterally Overgrown GaN Substrate", Appl. Phys. Lett., 72, pp.211-213, 1998.
4. T. Tojyo, S. Uchida, T. Mizumoto, T. Asano, M. Takeya, T. Hino, S. Kijima, S. Goto, Y. Yabuki and M. Ikeda, "High-Power AlGaInN Laser Diodes with High King Level and Low Relative Intensity Noise", Jpn. J. Appl. Phys., 41, pp. 1829-1833, 2002.
5. S. Nakamura, "Development and Future Prospects of InGaN-based LEDs and LDs", Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, S. Nakamura and S. F. Chichibu, pp. 317-350, Taylor & Francis, London, 2000.