Pixel scaling for SOI diode uncooled infrared focal plane arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5406, Issue PART 2, 2004, Pages 504-511

  Kosasayama, Yasuhiro ^b   Sugino, Takaki ^b   Nakaki, Yoshiyuki ^a   Fujii, Yoshio ^a   Inoue, Hiromoto ^a   Yagi, Hirofumi ^b   Hata, Hisatoshi ^a   Ueno, Masashi ^b   Takeda, Munehisa ^a   Kimata, Masafumi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b NONE   (Japan)

Author keywords

Pixel scaling; SOI diode; Thermal conductance; Uncooled irfpa

Indexed keywords

ABSORPTION; ACOUSTIC NOISE; COSTS; HIGH TEMPERATURE EFFECTS; INFRARED RADIATION; SENSITIVITY ANALYSIS; SENSORS; THERMAL CONDUCTIVITY;

PIXEL SCALING; SOI DIODES; THERMAL ISOLATION; UNCOOLED IRFPA;

ARRAYS;

EID: 10044273182     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.548886     Document Type: Conference Paper

References (3)

1. T. Ishikawa et al., "Performance of 320 × 240 uncooled IRFPA with SOI diode detectors, Proc. SPIE 4130, pp. 152-159. 2000.
2. W.Radford et al., "Sensitivity improvements in uncooled microbolometer FPAs," Proc. SPIE 3698, pp. 119-130. 1999.
3. E.Mottin et al., Uncooled amorphous silicon technology enhancement for 25μm pixel pitch achievement, Proc. SPIE 4820, pp. 200-207. 2002.