Performance of 320 × 240 uncooled IRFPA with SOI diode detectors

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4130, Issue , 2000, Pages 152-159

  Ishikawa, Tomohiro ^a   Ueno, Masashi ^a   Nakaki, Yoshiyuki ^a   Endo, Kazuyo ^a   Ohta, Yasuaki ^a   Nakanishi, Junji ^a   Kosasayama, Yasuhiro ^a   Yagi, Hirofumi ^a   Sone, Takanori ^a   Kimata, Masafumi ^a  

^a Advanced Technology R&D Cent   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; BOLOMETERS; DIODES; ELECTRIC POTENTIAL; LIGHT ABSORPTION; LIGHT REFLECTION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SPECIFIC HEAT; THERMAL EFFECTS;

DIODE METAL STRAP; INFRARED ABSORPTION; INFRARED FOCAL PLANE ARRAYS; METAL INTERCONNECTION; SILICON ON INSULATOR DIODE DETECTOR;

INFRARED DETECTORS;

EID: 0038398304     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.409857     Document Type: Article

References (0)