Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5406, Issue PART 1, 2004, Pages 13-20

  Boisvert, Joseph ^a   Masalykin, Andrey ^a   Kinsey, Geoffrey S ^a   Isshiki, Takahiro ^a   Haddad, Moran ^a   Sudharsanan, Rengarajan ^a   Zheng, Xiaoguang ^b   Campbell, Joe C ^b  

^a Spectrolab Inc   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Array; Avalanche photodiode; InAlAs; InGaAs; Ladar; Photodetector; SWIR

Indexed keywords

AVALANCHE PHOTODIODES (APD); DARK CURRENT; SEPARATE ABSORPTION AND CHARGE MULTIPLICATION (SACM); SHORT WAVE INFRARED (SWIR) IMAGING;

ARRAYS; AVALANCHE DIODES; BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ETCHING; INFRARED IMAGING; OPTICAL RADAR; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

PHOTODIODES;

EID: 10044248507     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.541541     Document Type: Conference Paper

References (3)

1. G.S. Kinsey, J.C. Campbell, and. A.C. Dentai " Waveguide Avalanche Photodiode Operating at 1.55 μm with a Gain-Bandwidth Product of 320 GHz" IEEE Photon. Tech. Lett. 13, 842 (2001).
2. R.J. McIntyre, "Multiplication Noise in Uniform Avalanche Diodes," IEEE Trans. Electron. Devices, ED-13, 164 (1966).
3. I. Watanabe, T. Torikai, and K. Taguchi, "Monte Carlo Simulation of Impact Ionization Rates in InAlAs-InGaAs Square and Graded Barrier Superlattice" IEEE J. Quantum Elec., 31, 1826 (1995).