Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal at low temperatures

Solid State Ionics

Volumn 175, Issue 1-4, 2004, Pages 431-435

  Han, L Q ^a   Kaimai, A ^a   Yashiro, K ^a   Nigara, Y ^a   Kawada, T ^a   Mizusaki, J ^a   Chen, P P ^b   Zhong, C J ^a   Higuchi, T ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

SrTiO3; Surface layer; Tunneling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRODES; FERMI LEVEL; LOW TEMPERATURE EFFECTS; SINGLE CRYSTALS;

OHMIC ELECTRODES; SRTIO3; SURFACE LAYER; TUNNELING;

STRONTIUM COMPOUNDS;

EID: 10044246183     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2004.03.046     Document Type: Conference Paper

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