A low noise, low power readout electronics circuit at 4 K in standard CMOS technology for PACS/Herschel

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5498, Issue , 2004, Pages 622-629

  Merken, Patrick ^a,b   Creten, Ybe ^a   Putzeys, Jan ^a   Souverijns, Tim ^a   Van Hoof, Chris ^a  

^a IMEC   (Belgium)

^b ROYAL MILITARY ACADEMY   (Belgium)

Author keywords

CMOS; Cryogenic; Far infrared; LHT; ROIC

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAMERAS; CMOS INTEGRATED CIRCUITS; CRYOGENICS; NETWORKS (CIRCUITS); PHOTOCONDUCTING DEVICES; PROJECT MANAGEMENT; SATELLITE OBSERVATORIES; SPECIFICATIONS; SPURIOUS SIGNAL NOISE;

COLD-READOUT ELECTRONICS (CRE); FAR-INFRARED; LIQUID HELIUM TEMPERATURE (LHT); READ OUT INTEGRATED CIRCUITS (ROIC);

SPECTROMETERS;

EID: 10044231208     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.550026     Document Type: Conference Paper

References (15)

1. A.Poglitsch, C.Waelkens, and N.Geis in IR Spaceborn Remote Sensing, Proc. SPIE 3759,p. 221,1999
2. A.Poglitsch, An optimised photoconductor instrument for FIRST, A.Wilson ed. ESA SP-401,p.25,1997
3. G.Pilbratt, The FIRST mission : Baseline, science objectives and operations, ESA SP-401, p.7,1997
4. Space Science-Horizon 2000, ESA SP-1070,1984
5. S.Kraft, O.Frenzl,L.Hermans,R.Katterloher,D.Rosenthal,U.Groezinger, J.W.Beeman in IR Spaceborn Remote Sensing VII, Proc SPIE 3759, p.214,1999
6. S.Kraft, O.Frenzl,O.Charlier,T.Cronje,R.Katterloher,D.Rosenthal,U.Groezinger, J.W.Beeman, UV, Optical and IR Space telescopes and Instruments, Proc SPIE 4013, 2000, p.233
7. Shoji Anamura, Masaaki Aoki, Toshiaki Masuhara, Osamu Minato, Yoshio Sakai and Testsuya Hayashida, Operation of Bulk CMOS Devices at Very Low Temperatures, IEEE Journal of Solid State Circuits, Vol. SC-21, NO.3, pp. 484-489 June 1986.
8. K.J. McCall, Mosfet Characteristics at 4.2K, Ext. Abstracts of the El. Chem.Soc fall meeting, pp.491-492.
9. Kamgar, Subthreshold Behavior of Silicon MOSFET's at 4.2K, Solid State Electronics, Vol. 25, pp.537-539, 1982.
10. Roy L.Maddox, p-MOSFET Parameters at Cryogenic Temperatures, IEEE Transactions on Electron Devices, Vol.23, pp. 16-21, 1976.
11. B. Dierickx, L. Warmerdam, E.Simoen, J.Vermeiren and C.Claeys, Model for Hysteresis and Kink Behavior of MOS Transistors Operating at 4.2K, IEEE Transaction on Electron Devices, Vol. 35, pp. 1120-1125, 1988.
12. E. Simoen, B. Dierickx and C. Claeys, Analytical Model for the Kink in nMOST's operating at liquid Helium Temperatures (LHT), Solid State Electronics, Vol. 33, pp.445- 454, 1990.
13. W. Redman-White, R. Lucas, R. Dunn, and P. Smithers, A radiationhard AGC stabilized SOS crystal oscillator, IEEE J. Solid-State Circuits,vol. 25, pp. 282-288, Feb. 1990.
14. W. Redman-White, B. M. Tenbroek, M. S. L. Lee, C. F. Edwards, M. J.Uren, and R. J. T. Bunyan, Analogue design issues for SOI CMOS, in Proc. 1996 IEEE Int. SOI Conf., Oct. 1996, pp. 6-8.
15. M.J.Deen, Cryogenic operation of CMOS-based microsystems and computers, Microprocessors & systems, vol 13-4, pp.245-253, 1989.