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Volumn 2002-January, Issue , 2002, Pages 275-280
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Ballistic transport in nanostructures used for novel THz-emitters
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM ARSENIDE;
MICROELECTRONICS;
NANOSTRUCTURES;
PHOTOCONDUCTIVITY;
SEMICONDUCTING GALLIUM;
TEMPERATURE;
BALLISTIC TRANSPORTS;
LOW-TEMPERATURE-GROWN GAAS;
NOVEL CONCEPT;
PHOTOCONDUCTIVE GAINS;
PHOTOGENERATED ELECTRONS;
RECOMBINATION LIFETIME;
THZ EMITTERS;
TRANSIT TIME;
BALLISTICS;
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EID: 10044222823
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/COMMAD.2002.1237245 Document Type: Conference Paper |
Times cited : (3)
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References (6)
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