Ballistic transport in nanostructures used for novel THz-emitters

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2002-January, Issue , 2002, Pages 275-280

  Dohler G H ^a,d   Eckardt, M ^a   Schwanhausser A ^a   Renner, F ^a   Robledo, L ^a   Friedrich, A ^a   Pohl, P ^a   Malzer, S ^a   Kiesel, P ^c   Driscoll, D ^b   Hanson, M ^b   Gossard, A C ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b Santa Barbara   (United States)

^c PALO ALTO RESEARCH CENTER   (United States)

^d TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; MICROELECTRONICS; NANOSTRUCTURES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM; TEMPERATURE;

BALLISTIC TRANSPORTS; LOW-TEMPERATURE-GROWN GAAS; NOVEL CONCEPT; PHOTOCONDUCTIVE GAINS; PHOTOGENERATED ELECTRONS; RECOMBINATION LIFETIME; THZ EMITTERS; TRANSIT TIME;

BALLISTICS;

EID: 10044222823     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2002.1237245     Document Type: Conference Paper

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6. A. Schwanhäußer, et al., Proceedings of HCIS12 (2001), Physica B 314, 273 (2002)