Self-assembled ErAs islands in GaAs for THz applications

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 97-100

  Kadow, Christoph ^a   Jackson, Andrew W ^a   Gossard, Arthur C ^a   Bowers, John E ^a   Matsuura, Shuji ^b   Blake, Geoffrey A ^b  

^a Santa Barbara   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ERBIUM COMPOUNDS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; PHOTOCONDUCTING MATERIALS; SEMICONDUCTOR SUPERLATTICES;

CARRIER DYNAMICS; ERBIUM ARSENIDE; NANOMETER SIZED ISLANDS; SELF ASSEMBLED ISLAND;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033872810     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00314-8     Document Type: Article

References (7)

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