Compensation of the parasitic capacitance of a scanning force microscope cantilever used for measurements on ferroelectric capacitors of submicron size by means of finite element simulations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 7198-7201

  Prume, Klaus ^a   Roelofs, Andreas ^b   Schmitz, Thorsten ^a   Reichenberg, Bernd ^a   Tiedke, Stephan ^a   Waser, Rainer ^b  

^a AIXACCT SYSTEMS GMBH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Compensation procedure; Finite element simulation; Parasitic capacitance; Scanning force microscopy; Submicron size capacitor characterization

Indexed keywords

CANTILEVER BEAMS; CAPACITORS; FINITE ELEMENT METHOD; GEOMETRY; MICROSCOPES; PARAMETER ESTIMATION; VOLATILE ORGANIC COMPOUNDS;

COMPENSATION PROCEDURE; PARASITIC CAPACITANCE; SUBMICRON-SIZE CAPACITOR CHARACTERIZATION;

FERROELECTRIC MATERIALS;

EID: 0942303942     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.7198     Document Type: Article

References (6)

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