Extreme ultraviolet lithography mask flatness and electrostatic chucking analysis

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 3091-3096

  Mikkelson, A ^a   Engelstad, R ^a   Lovell, E ^a   Blaedel, K ^b   Claudet, A ^b  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTROSTATICS; FINITE ELEMENT METHOD; LATEXES; MASKS; POLYNOMIALS; POLYSTYRENES; PRESSURE EFFECTS;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); LEGENDRE POLYNOMIALS; POWER SPECTRAL DENSITY (PSD);

PHOTOLITHOGRAPHY;

EID: 0942300019     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1627810     Document Type: Conference Paper

References (6)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, December 2001.
2. H. Meiling et al., J. Vac. Sci. Technol. B 18, 2921 (2000).
3. SEMI P37-1101, SEMI Standard Specification for Extreme Ultraviolet Lithography Mask Substrates.
4. K. L. Blaedel et al., Proc. SPIE 4688, 767 (2002).
5. Wolfram Research website at http://mathworld.wolfram.com/LegendrePolynornial.html.
6. A. Mikkelson et al., Chucking of Extreme Ultraviolet (EUV) Mask Substrates Final Report, International SEMATECH Report No. 03014362A-ENG.