Effect of annealing on thermoelectric properties of bismuth telluride compounds doped with various additives

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 161-169

  Yamashita, Osamu ^a   Tomiyoshi, Shoichi ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; GROWTH (MATERIALS); HIGH TEMPERATURE EFFECTS; HYDROGEN; INGOTS; SEMICONDUCTOR DOPING; THERMOELECTRICITY;

BISMUTH TELLURIDE; BRIDGMAN METHOD;

BISMUTH COMPOUNDS;

EID: 0942290070     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630363     Document Type: Article

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