Monte Carlo simulation of hot-carrier phenomena in open quantum devices: A kinetic approach

Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 139-141

  Zaccaria, Remo Proietti ^a   Iotti, Rita Claudia ^a   Rossi, Fausto ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; HOT CARRIERS; MONTE CARLO METHODS; RELAXATION PROCESSES;

CARRIER DYNAMICS; QUANTUM DEVICES; THERMALIZATION;

QUANTUM ELECTRONICS;

EID: 0942278262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637965     Document Type: Article

References (7)

1. See, e.g., C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulations (Springer-Verlag, Wien, 1989).
2. See, e.g., Theory of Transport Properties of Semiconductor Nanostructures, edited by E. Schöll (Chapman & Hall, London, 1998).
3. See, e.g., R. C. Iotti and F. Rossi, Phys. Rev. Lett. 87, 146603 (2001).
4. See, e.g., F. Rossi and T. Kuhn, Rev. Mod. Phys. 74, 895 (2002), and references therein.
5. R. Proietti Zaccaria and F. Rossi, Phys. Rev. B 67, 113311 (2003).
6. M. V. Fischetti, Phys. Rev. B 59, 4901 (1999), and references therein.
7. See, e.g., R. C. Iotti and F. Rossi, Appl. Phys. Lett. 76, 2265 (2000).