Positive temperature coefficient of resistivity effect in niobium-doped barium titanate ceramics obtained at low sintering temperature

Journal of the European Ceramic Society

Volumn 24, Issue 6, 2004, Pages 1227-1231

  Wang, Xiaoxing ^a   Chan, Helen Lai Wa ^a   Choy, Chung loong ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

BaTiO3; Electrical properties; Grain boundary; Sintering; Thermistor

Indexed keywords

BARIUM COMPOUNDS; DENSIFICATION; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; NIOBIUM; SEMICONDUCTOR DOPING; SINTERING; THERMAL EFFECTS;

POSITIVE TEMPERATURE COEFFICIENT OF RESISTIVITY (PTCR); SINTERING TEMPERATURE;

CERAMIC MATERIALS;

CERAMICS; ELECTRICAL PROPERTY; SINTERING;

EID: 0942267382     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(03)00379-0     Document Type: Article

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