Some electrical properties of ion-implanted Urania - Part II

International SAMPE Symposium and Exhibition (Proceedings)

Volumn 48 II, Issue , 2003, Pages 1844-1854

  Von Roedern, B G ^a   Meek, T T ^b   Haire, M J ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Semiconductors; Transport Properties; Uranium Dioxide (UO 2)

Indexed keywords

DARK CURRENTS; NONOHMIC CONDUCTION;

ACTIVATION ENERGY; DOPING (ADDITIVES); INFRARED SPECTROPHOTOMETERS; ION IMPLANTATION; LIGHT ABSORPTION; LIGHT TRANSMISSION; NUCLEAR FUELS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

URANIUM DIOXIDE;

EID: 0842268319     PISSN: 08910138     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. R. R. Price, M. J. Haire, and A. G. Croff, "Depleted Uranium Uses R&D Program," Waste Management 2001 Symposium, Tucson, Arizona, February 25-March 1, 2001.
2. 2," The American Nuclear Society Winter Meeting, November 17-21, 2002, Washington, D.C.
3. 2," J. Nucl. Mater. 88, 185-192 (1980).
4. 2: Part 1, Single Crystals," Battelle-Northwest, 1986.
5. Gremlin Handbook of Inorganic Chemistry, Uranium Supplement Volume C5, 8th ed., Gmelin Institut für Anorganische Chemie, der Max-Planck-Gesellschaff zur Forderung de Wissenschaffen, 1986.
6. J. L. Bates, "Visible and Infrared Absorption spectra of Uranium Dioxide," Hanford Atomic Products Operation (HW-79033), 1963.
7. M. H. Cohen, H. Fritzsche, and S. R. Ovshinsky, "Simple Band Model for Amorphous Semiconducting Alloys," Phys. Rev. 22, 1065 (1969).
8. 2," The Society for the Advancement of Materials and Process Engineering (SAMPE) 2002 Symposium and Exhibition, Long Beach, California, May 12-16, 2002, pp. 1703-1710.