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Volumn 4, Issue 10, 2003, Pages 1109-1120

New generations of infrared detectors based on HgCdTe;Les nouvelles générations de détecteurs infrarouge à base de HgCdTe

Author keywords

HgCdTe; High definition infrared imaging; Infrared detectors; IRCMOS; Molecular beam epitaxy

Indexed keywords


EID: 0742306724     PISSN: 16310705     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.crhy.2003.10.011     Document Type: Short Survey
Times cited : (9)

References (9)
  • 2
    • 0027649785 scopus 로고
    • Large improvement in HgCdTe photovoltaic detector performance at LETI
    • Destefanis G. Chamonal J.P. Large improvement in HgCdTe photovoltaic detector performance at LETI J. Electron. Mater. 22 8 1993
    • (1993) J. Electron. Mater. , vol.22 , Issue.8
    • Destefanis, G.1    Chamonal, J.P.2
  • 6
    • 0023166530 scopus 로고
    • Electrical doping of HgCdTe by ion implantation and heat treatment
    • Destefanis G. Electrical doping of HgCdTe by ion implantation and heat treatment J. Crystal Growth 86 1988 700-722
    • (1988) J. Crystal Growth , vol.86 , pp. 700-722
    • Destefanis, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.