Highly linear receiver front-end adopting MOSFET transconductance linearization by multiple gated transistors

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 1, 2004, Pages 223-229

  Kim, Tae Wook ^a   Kim, Bonkee ^b   Lee, Kwyro ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Integrant Technologies Inc   (South Korea)

Author keywords

CMOS amplifier; CMOS mixer; Derivative transconductance cancellation; Third order input intercept point (IIP3); Third order nonlinearity

Indexed keywords

CMOS INTEGRATED CIRCUITS; DESIGN FOR TESTABILITY; ELECTRIC POWER SUPPLIES TO APPARATUS; FEEDBACK AMPLIFIERS; GAIN MEASUREMENT; GATES (TRANSISTOR); HARMONIC ANALYSIS; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

GILBERT CELL MIXER; HARMONIC FEEDBACK; LINEAR RECEIVER; LOW NOISE AMPLIFIER; MULTIPLE GATED TRANSISTOR; THIRD ORDER INPUT INTERCEPT POINT; THIRD ORDER NONLINEARITY; TRANSCONDUCTANCE LINEARIZATION;

LINEAR NETWORK ANALYSIS;

EID: 0742303637     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.820843     Document Type: Article

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