Use of resonance ionization microprobe analysis for characterization of ultrashallow doping profiles in semiconductors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 294-300

  Arlinghaus, H F ^a   Joyner, C F ^a  

^a Atom Sciences Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0642277441     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588464     Document Type: Article

References (18)

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