Depth profiling of B through suicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 311-323

  De Bisschop, P ^a   Gomez, J ^a   Geenen, L ^a   Vandervorst, W ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0642338671     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (27)

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