Thickness of a Modified Surface Layer Formed in a Silsesquioxane-based Low-k Material during Etching in a Fluorocarbon Plasma

Korean Journal of Chemical Engineering

Volumn 20, Issue 6, 2003, Pages 1131-1133

  Hwang, Sung Wook ^a   Lee, Gyeo Re ^a   Min, Jae Ho ^a   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

Author keywords

Fluorocarbon; Low k Material; Plasma Etching; Silsesquioxane; Surface Layer

Indexed keywords

CHEMICAL BONDS; CURING; DISSOCIATION; EMISSION SPECTROSCOPY; FLUOROCARBONS; INTERFACES (MATERIALS); OXYGEN; PERMITTIVITY; PLASMA ETCHING; PLASMAS; SILICON;

LOW-K MATERIALS; SILSESQUIOXANE; SURFACE LAYERS;

SURFACE TREATMENT;

EID: 0442295437     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02706948     Document Type: Article

References (6)

1. Cho, B.-O., Hwang, S.-W., Ryu, J.-H. and Moon, S. H., "More Vertical Etching Profile Using a Faraday Cage in Plasma Etching", Rev. Sci. Instrum., 70, 2458 (1999).
2. Coburn, J. W. and Chen, M., "Optical Emission Spectroscopy of Reactive Plasmas: A Method for Correlating Emission Intensities to Reactive Particle Density", J. Appl. Phys., 51, 3134 (1980).
3. Hwang, S.-W., Lee, G.-R., Min, J.-H., Moon, S. H., Kim, Y. C., Ryu, H.-K., Cho, Y. S. and Kim, J. W., "Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma", Jpn. J. Appl. Phys., 41, 5782 (2002).
4. Rueger, N. R., Beulens, J. J., Schaepkens, M., Doemling, M. F., Mirza, J. M., Standaert, T. E. F. M. and Oehrlein, G. S., "Role of Steady State Fluorocarbon Films in the Etching of Silicon Dioxide Using CHF3 in an Inductively Coupled Plasma Reactor", J. Vac. Sci. Technol., A 15, 1881 (1997).
5. Ryu, J.-H., Cho, B.-O., Hwang, S.-W., Moon, S. H. and Kim, C.-K., "Trajectories of Ions Inside a Faraday Cage Located in a High Density Plasma Etcher", Korean J. Chem. Eng., 20, 407 (2003).
6. 2 with Equipment and Feature Scale Models", J. Vac. Sci. Technol., A 19, 524 (2001).