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Volumn 37, Issue 12, 2003, Pages 1414-1420

Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates

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EID: 0348231667     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1634664     Document Type: Article
Times cited : (8)

References (12)
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    • A. A. Andaspaeva, A. N. Baranov, A. A. Guseǐnov, et al., Pis'ma Zh. Tekh. Fiz. 15 (18), 71 (1989) [Sov. Tech. Phys. Lett. 15, 734 (1989)].
    • (1989) Sov. Tech. Phys. Lett. , vol.15 , pp. 734
  • 8
    • 27744517911 scopus 로고
    • A. A. Andaspaeva, A. N. Baranov, A. A. Guseǐnov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 24, 1708 (1990) [Sov. Phys. Semicond. 24, 1067 (1990)].
    • (1990) Sov. Phys. Semicond. , vol.24 , pp. 1067
  • 10
    • 0033075971 scopus 로고    scopus 로고
    • T. N. Danilova, B. E. Zhurtanov, A. P. Zakgeǐm, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 239 (1999) [Semiconductors 33, 206 (1999)].
    • (1999) Semiconductors , vol.33 , pp. 206
  • 12
    • 0035531691 scopus 로고    scopus 로고
    • B. Zhurtanov, É. V. Ivanov, A. N. Imenkov, et al., Pis'ma Zh. Tekh. Fiz. 27 (5), 1 (2001) [Tech. Phys. Lett. 27, 173 (2001)].
    • (2001) Tech. Phys. Lett. , vol.27 , pp. 173


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.