High-efficiency 3.4-4.4 μm light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature

Technical Physics Letters

Volumn 27, Issue 3, 2001, Pages 173-175

  Zhurtanov, B ^a   Ivanov, EV ^a   Imenkov, A N ^a   Kolchanova, N M ^a   Rozov, A E ^a   Stoyanov, N ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035531691     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1359816     Document Type: Article

References (5)

1. N. P. Esina, N. V. Zotova, B. A. Matveev, et al., Pis'ma Zh. Tekh. Fiz. 9 (7), 391 (1983) [Sov. Tech. Phys. Lett. 9, 167 (1983)].
2. B. Matveev, N. Zotova, S. Karandashov, et al., IEE Proc.: Optoelectron. 145 (5), 254 (1998).
3. A. A. Popov, V. V. Sherstnev, Yu. P. Yakovlev, et al., Electron. Lett. 33, 86 (1997).
4. A. A. Popov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev, Pis'ma Zh. Tekh. Fiz. 24 (15), 34 (1998) [Tech. Phys. Lett. 24, 596 (1998)].
5. A. Krier, H. H. Gao, V. V. Sherstnev, and Yu. P. Yakovlev, J. Phys. D (2001) (in press).