The study of InPO4/InP(1 0 0) by EELS and AES

Vacuum

Volumn 65, Issue 2, 2002, Pages 185-191

  Bouslama, M ^a   Lounis, Z ^a   Ghaffour, M ^a   Ghamnia, M ^b   Jardin, C ^c  

^a NATIONAL POLYTECHNIC SCHOOL OF ORAN   (Algeria)

^b UNIVERSITY OF ORAN   (Algeria)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON IRRADIATION; ELECTRON MOBILITY; HEATING; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; ULTRAHIGH VACUUM;

ELECTRICAL INSTABILITIES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037134133     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00480-8     Document Type: Article

References (8)