Photoluminescence of Zn xCd yMg 1-x-ySe alloys as a manifestation of the breakdown of "common-anion rule"

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7136-7138

  Zhou, X ^a,c   Gu, Y ^b   Kuskovsky, Igor L ^b   Neumark, G F ^b   Zeng, L ^a   Tamargo, M C ^a  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b Department of Earth and Environmental Sciences   (United States)

^c Physics Departmen   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE EXCITATION; POTENTIAL FLUCTUATIONS; VALENCE BAND OFFSETS (VBO);

COMPOSITION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRIC EXCITATION; ELECTRON TRAPS; ENERGY GAP; EXCITONS; FERMI LEVEL; LIGHT EMISSION; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NEGATIVE IONS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; ULTRAHIGH VACUUM;

ZINC ALLOYS;

EID: 0348223215     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625096     Document Type: Article

References (25)

1. M. C. Tamargo, W. Lin, S. P. Guo, Y. Y. Luo, and Y. C. Chen, J. Cryst. Growth 214/215, 1058 (2000).
2. W. Faschinger and J. Nürnberger, Appl. Phys. Lett. 77, 187 (2000).
3. L. Zeng, B. X. Yang, A. Cavus, W. Lin, Y. Y. Luo, M. C. Tamargo, Y. Guo, and Y. C. Chen, Appl. Phys. Lett. 72, 3136 (1998).
4. X. Zhou, M. Muñoz, M. C. Tamargo, and Y. C. Chen, J. Appl. Phys. (to be published).
5. J. X. Shen, R. Pittini, Y. Oka, S. P. Guo, and M. C. Tamargo, Appl. Phys. Lett. 75, 3494 (1999).
6. M. Strassburg, M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, D. Litvinov, D. Gerthsen, M. Schmidbauer, and P. Schäfer, J. Cryst. Growth 221, 416 (2000).
7. P. Prete, N. Lovergine, L. Tapfer, C. Zanotti-Fregonara, and A. M. Mancini, J. Cryst. Growth 214, 119 (2000).
8. S. Permogorov and A. Reznitsky, J. Lumin. 52, 201 (1992).
9. S. A. Permogorov, A. Yu, L. N. Naumov, L. N. Tenishev, A. N. Reznitsky, and D. L. Fedorov, Phys. Solid State 37, 1350 (1995).
10. C. F. Klingshirn, Semiconductor Optics (Springer, New York, 1997).
11. J. L. Pankove, Optical Processes in Semiconductors (Dover, New York, 1974).
12. C. Gourdon, P. Lavallard, S. Permogorov, A. Reznitsky, Y. Aaviksoo, and Y. Lippmaa, J. Lumin. 39, 111 (1987).
13. L. Zeng, B. X. Yang, M. C. Tamargo, E. Snoeks, and L. Zhao, Appl. Phys. Lett. 72, 1317 (1998).
14. L. Zeng, S. P. Guo, Y. Y. Luo, M. C. Tamargo, H. Xing, and G. S. Cargill III, J. Vac. Sci. Technol. B 17, 1255 (1999).
15. Here we use the temperature dependence of the CdSe band gap energy (I. Hernandez-Calderon, in II-VI Semiconductor Materials and Their Applications, edited by M. C. Tamargo (Taylor & Francis, New York, 2002), as a general reference.
16. T. Y. Lin, J. C. Fan, and Y. F. Chen, Semicond. Sci. Technol. 14, 406 (1999).
17. S. M. Olshoorn, F. A. J. M. Driessen, A. P. A. M. Eijkelenboom, and L. J. Oiling, J. Appl. Phys. 73, 7798 (1993).
18. We plot only PL of samples with [Mg]≥20%, since at lower Mg concentrations samples show negligible PL shifts with excitation intensity.
19. I. Kuskovsky, D. Li, G. F. Neumark, V. N. Bondarev, and P. V. Pikhitsa, Appl. Phys. Lett. 75, 1243 (1999).
20. M. Wörz, E. Griebl, Th. Reisinger, R. Flierl, B. Haserer, T. Semmler, T. Frey, and W. Gebhardt, Phys. Status Solidi B 202, 805 (1997).
21. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 72, 2011 (1998).
22. W. I. Wang and F. Stern, J. Vac. Sci. Technol. B 3, 1280 (1985).
23. S. P. Kowalczyk, J. T. Cheung, E. A. Kraut, and R. W. Grant, Phys. Rev. Lett. 56, 1605 (1986).
24. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 68, 2879 (1996).
25. S.-H. Wei and A. Zunger, Phys. Rev. Lett. 59, 144 (1987).