Manipulation of the lateral potential geometry of a quantum dot located in a multiple gated vertical single electron transistor

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 2, Issue 1-4, 1998, Pages 583-587

  Austing, David Guy ^a   Honda, Takashi ^a   Tarucha, Seigo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Artificial atom; Coulomb blockade; Quantum dot; Single electron transistor

Indexed keywords

EID: 0348199596     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/s1386-9477(98)00119-2     Document Type: Article

References (6)

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2. D.G. Austing, T. Honda, S. Tarucha, Semicond. Sci. Technol. 12 (1997) 631.
3. D.G. Austing, T. Honda, S. Tarucha, Semicond. Sci. Technol. 11 (1996) 388.
4. S. Tarucha, D.G. Austing, T. Honda, R.J. van der Hage, L.P. Kouwenhoven, Phys. Rev. Lett. 77 (1996) 3613.
5. S. Tarucha, D.G. Austing, T. Honda, R.J. van der Hage, L.P. Kouwenhoven, Jpn. J. Appl. Phys. 36 (1997) 3917.
6. D.G. Austing, T. Honda, S. Tarucha, Jpn. J. Appl. Phys. 36 (1997) 4151.