Effects of dissipation on a superconducting single electron transistor

Physical Review Letters

Volumn 87, Issue 1, 2001, Pages

  Kycia, J B ^a,b,d   Chen, J ^a,b   Therrien, R ^a,b   Kurdak, C ^a,b,e   Campman, K L ^c   Gossard, A C ^c   Clarke, John ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF WATERLOO   (Canada)

^e UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ENERGY GAP; HETEROJUNCTIONS; JOSEPHSON JUNCTION DEVICES; MAGNETIC FIELD EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS; TUNNEL JUNCTIONS;

JOSEPHSON COUPLING ENERGY; MINIMUM ZERO-BIAS CONDUCTANCE; SUPERCONDUCTING SINGLE ELECTRON TRANSISTOR; TWO DIMENSIONAL ELECTRON GAS;

SUPERCONDUCTING DEVICES;

EID: 39249085555     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.87.017002     Document Type: Article

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