Effect of pressure on oxygen diffusion jump in Si: Quantum-chemical simulations

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 773-776

  Gusakov, Vasilii ^a   Murin, Leonid ^a  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

Diffusivity; Oxygen; Pressure; Silicon

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; ELECTRON TRANSITIONS; HYDROSTATIC PRESSURE; OXYGEN; PRESSURE EFFECTS; QUANTUM THEORY; SILICON;

DIFFUSIVITY; THERMAL DONORS;

DIFFUSION;

EID: 0347946853     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.272     Document Type: Conference Paper

References (10)

1. Newman R.C., Jones R. Shimura F. Oxygen in Silicon, Semiconductors and Semimetals. Vol. 42:1994;209-352 Academic Press, London.
2. Newman R.C. J. Phys.: Condens. Matter. 12:2000;R335.
3. Misiuk A. Mater. Phys. Mech. 1:2000;119.
4. Emtsev V.V., et al. Appl. Phys. Lett. 72:1997;264.
5. Emtsev V.V. Jr., et al. Phys. Stat. Sol. B. 235:2003;75.
6. Antonova I.V., et al. Physica B. 225:1996;251.
7. Jiang Z., Brown A. Phys. Rev. Lett. 74:1995;2046.
8. Pesola M., et al. Phys. Rev. B. 60:1999;11449.
9. Coutinho J., et al. Phys. Rev. B. 62:2000;10824.
10. Hänggi P., Talkner P., Borcovec M. Rev. Mod. Phys. 62:1990;251.