Etching characteristics of LiNbO3 crystal by fluorine gas plasma reactive ion etching

Science and Technology of Advanced Materials

Volumn 2, Issue 3-4, 2001, Pages 563-569

  Tamura, Masashi ^a   Yoshikado, Shinzo ^a  

^a DOSHISHA UNIVERSITY   (Japan)

Author keywords

AFM; Crystallinity; Etched surface; F radicals; LiNbO3; Plasma RIE; XPS; XRD

Indexed keywords

EID: 0347769637     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(01)00138-3     Document Type: Article

References (6)

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6. 3 crystal in fluorine system gas plasma RIE, Trans. IEE Jpn 120 (A) (2000) 198-203.