External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 370-373

  Liu, X ^a   Lim, W L ^a   Titova, L V ^a   Wojtowicz, T ^a,b   Kutrowski, M ^a,b   Yee, K J ^a   Dobrowolska, M ^a   Furdyna, J K ^a   Potashnik, S J ^c   Stone, M B ^c   Schiffer, P ^c   Vurgaftman, I ^d   Meyer, J R ^d  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b INSTITUTE OF PHYSICS   (Poland)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Ferromagnetic semiconductor; InMnAs; Magnetic anisotropy

Indexed keywords

BOLOMETERS; ELECTRON DIFFRACTION; FERROMAGNETISM; HALL EFFECT; MAGNETIC ANISOTROPY; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM INTERFERENCE; SPIN REORIENTATION;

HETEROJUNCTIONS;

EID: 0347759810     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.08.036     Document Type: Conference Paper

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