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For Si atoms, at a diffraction angle θ=5°, electron's scattering cross section is stronger by the factor of 160 000. The ratio increases as we decrease diffraction angles. See Hawoong Hong, Ph.D. thesis, MIT (1988) and H. A. Bethe and R. Jackiw, Intermediate Quantum Mechanics (Benjamin/Cummings, Reading, 1968), p. 244.
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For Si atoms, at a diffraction angle θ=5°, electron's scattering cross section is stronger by the factor of 160 000. The ratio increases as we decrease diffraction angles. See Hawoong Hong, Ph.D. thesis, MIT (1988) and H. A. Bethe and R. Jackiw, Intermediate Quantum Mechanics (Benjamin/Cummings, Reading, 1968), p. 244.
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For CTR intensity measurements with a sample fixed, see E. D. Specht and F. T. Walker, J. Appl. Crystallogr. 26, 166 (1993). For the polarization factor of a surface six-circle diffractometer, see Elias Vlieg, ibid. 30, 532 (1997).
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