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Volumn 152, Issue 1, 2000, Pages 39-47

Investigations on the evaluation of schottky barrier diode parameters of the proton irradiated Ti/n-GaAs

Author keywords

Annealing; CONTROL; Irradiation; Schottky barrier diode

Indexed keywords


EID: 0347614843     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420150008211812     Document Type: Article
Times cited : (1)

References (11)
  • 8
    • 0003953649 scopus 로고
    • John Wiley & Sons, New York, 2nd edn., Chapter 5
    • S.M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981), 2nd edn., Chapter 5, pp. 245-311.
    • (1981) Physics of Semiconductor Devices , pp. 245-311
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.