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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6303-6307

Local Structural Properties in the Terahertz Semiconductor Zn 1-xCdxTe

(1) Han, Sang Wook a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

Disorder; Local structure; Semiconductor; Terahertz; XAFS; ZnCdTe

Indexed keywords

CRYSTALS; ELECTRON ENERGY LEVELS; LIGHT SOURCES; SEMICONDUCTOR DOPING; X RAY ANALYSIS; X RAY POWDER DIFFRACTION;

LOCAL STRUCTURAL PROPERTIES; X-RAY ABSORPTION FINE STRUCTURES (XAFS);

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0347590776 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.6303 Document Type: Article

Times cited : (9)

References (23)

1
- 0037175820
- K. Liu, H.-S. Kang, T.-K. Kim and X.-C. Zhang: Appl. Phys. Lett. 81 (2002) 4115.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4115
- Liu, K.¹ Kang, H.-S.² Kim, T.-K.³ Zhang, X.-C.⁴

2
- 0031559858
- Q. Wu and X.-C. Zhang: Appl. Phys. Lett. 71 (1997) 1285.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1285
- Wu, Q.¹ Zhang, X.-C.²

3
- 0030143367
- Q. Wu, M. Litz and X.-C. Zhang: Appl. Phys. Lett. 68 (1996) 2924.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2924
- Wu, Q.¹ Litz, M.² Zhang, X.-C.³

4
- 0033558481
- A. Leitenstorfer, S. Hunsche, J. Shah and M. C. NUSS: Appl. Phys. Lett. 74 (1999) 1516.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1516
- Leitenstorfer, A.¹ Hunsche, S.² Shah, J.³ Nuss, M.C.⁴

5
- 0000032030
- G. Gallot, J. Zhang, R. W. MeGowan, T.-I. Jeon and D. Grischkowsky: Appl. Phys. Lett. 74 (1999) 3450.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3450
- Gallot, G.¹ Zhang, J.² Megowan, R.W.³ Jeon, T.-I.⁴ Grischkowsky, D.⁵

6
- 0033892389
- Z. Piao, M. Tani and K. Sakai: Jpn. J. Appl. Phys. 39 (2000) 96.
- (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 96
- Piao, Z.¹ Tani, M.² Sakai, K.³

7
- 0000785750
- M. Schall and P. Uhd Jepsen: Appl. Phys. Lett. 77 (2000) 2801.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2801
- Schall, M.¹ Uhd Jepsen, P.²

8
- 0032615075
- D. T. J. Hurle: J. Appl. Phys. 85 (1999) 6957.
- (1999) J. Appl. Phys. , vol.85 , pp. 6957
- Hurle, D.T.J.¹

9
- 0001271532
- C. H. Park and D. J. Chadi: Phys. Rev. Lett. 75 (1995) 1134.
- (1995) Phys. Rev. Lett. , vol.75 , pp. 1134
- Park, C.H.¹ Chadi, D.J.²

10
- 0037096471
- M.-H. Tsai, F. C. Peiris, S. Lee and J. K. Furdyna: Phys. Rev. B 65 (2002) 235202.
- (2002) Phys. Rev. B , vol.65 , pp. 235202
- Tsai, M.-H.¹ Peiris, F.C.² Lee, S.³ Furdyna, J.K.⁴

11
- 0020160356
- C. B. Norris: J. Appl. Phys. 53 (1982) 5172.
- (1982) J. Appl. Phys. , vol.53 , pp. 5172
- Norris, C.B.¹

12
- 0033330530
- J. A. García, A. Remón, V. Muñoz and R. Triboulet: Jpn. J. Appl. Phys. 38 (1999) 5123.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 5123
- García, J.A.¹ Remón, A.² Muñoz, V.³ Triboulet, R.⁴

13
- 0009193097
- M. D. Kim, T. W. Kang, J. M. Kim, H. K. Kim, Y. T. Jeong and T. W. Kim: J. Appl. Phys. 73 (1993) 4077.
- (1993) J. Appl. Phys. , vol.73 , pp. 4077
- Kim, M.D.¹ Kang, T.W.² Kim, J.M.³ Kim, H.K.⁴ Jeong, Y.T.⁵ Kim, T.W.⁶

14
- 34447304895
- E. A. Stern: Phys. Rev. B 10 (1974) 3027.
- (1974) Phys. Rev. B , vol.10 , pp. 3027
- Stern, E.A.¹

15
- 0001074638
- J. J. Rehr and R. C. Albers: Phys. Rev. B 41 (1990) 8139.
- (1990) Phys. Rev. B , vol.41 , pp. 8139
- Rehr, J.J.¹ Albers, R.C.²

16
- 11844260365
- J. J. Rehr, R. C. Albers and S. I. Zabinsky: Phys. Rev. Lett. 69 (1992) 3397.
- (1992) Phys. Rev. Lett. , vol.69 , pp. 3397
- Rehr, J.J.¹ Albers, R.C.² Zabinsky, S.I.³

17
- 0012013001
- E. A. Stern, M. Newville, B. Ravel, Y. Yacoby and D. Haskel: Physica B 208-209 (1995) 117.
- (1995) Physica B , vol.208-209 , pp. 117
- Stern, E.A.¹ Newville, M.² Ravel, B.³ Yacoby, Y.⁴ Haskel, D.⁵

18
- 3543050423
- S.-W. Han, E. A. Stern, D. Hankel and A. R. Moodenbaugh: Phys. Rev. B 66 (2002) 094101.
- (2002) Phys. Rev. B , vol.66 , pp. 094101
- Han, S.-W.¹ Stern, E.A.² Hankel, D.³ Moodenbaugh, A.R.⁴

19
- 0642303383
- A. L. Ankudinov and J. J. Rehr: Phys. Rev. B 56 (1997) 1712.
- (1997) Phys. Rev. B , vol.56 , pp. 1712
- Ankudinov, A.L.¹ Rehr, J.J.²

20
- 85085784743
- 0.05Te
- 0.05Te.
- Han, S.-W.¹ Kang, H.-S.²

21
- 0030259010
- A. Nahata, A. S. Weling and T. F. Heinz: Appl. Phys. Lett. 69 (1996) 2321.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2321
- Nahata, A.¹ Weling, A.S.² Heinz, T.F.³

22
- 0041288968
- ed. Wolfe (Academic Press, New York)
- S. H. Wemple and M. diDomenico: Advances in Materials and Device Research, ed. Wolfe (Academic Press, New York, 1972) Vol. 3.
- (1972) Advances in Materials and Device Research , vol.3
- Wemple, S.H.¹ DiDomenico, M.²

23
- 0037104250
- H. Saito, V. Zayets, S. Yamagata and K. Ando: Phys. Rev. B 66 (2002) 81201.
- (2002) Phys. Rev. B , vol.66 , pp. 81201
- Saito, H.¹ Zayets, V.² Yamagata, S.³ Ando, K.⁴

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