A novel technique to re-construct 3D void in passivated metal interconnects

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 409-414

  Tan, Cher Ming ^a   Gan, Zhenghao ^a   Zhang, Guan ^a   Prasad, Krishnamachar ^a   Zhang, Dao Hua ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRON BEAMS; FINITE ELEMENT METHOD; PASSIVATION; SURFACE TREATMENT;

ELECTRON BEAM HEATING; ELECTRON BEAM SCANNING; PASSIVATED METAL INTERCONNECTS; RESISTANCE CHANGE; VOLTAGE PERTURBATION;

METALLIC FILMS;

EID: 0347569295     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e4.8     Document Type: Conference Paper

References (6)

1. Z.H. Gan, C.M. Tan, G. Zhang, K. Prasad and D.H. Zhang, submitted to IEEE Transactions on Devices and Materials Reliability.
2. C.M. Tan and Z.H. Gan, "Voids characterization system for metal interconnection", 60/438,920, US patent, filed on 9th Jan 2003.
3. J.T. Yue and S. Pramanick, "Void detection in metallization patterns," U.S. Patent 5 504 017, Apr. 2, 1996.
4. T. Marieb, J.C. Bravman, P. Flinn, and M. Madden, in MRS Symp. Proc., 338, 409-413 (1994).
5. J.C. Doan, J.C. Bravman, P.A. Flinn, and T.N. Marieb, in MRS Symp. Proc., 516, 83-88 (1998).
6. K. Nikawa, C. Matsumoto, and S. Inoue, Jap. J. Appl. Phys., 31, 2260-2265 (1995).