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1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 296-300

High temperature stable WSix ohmic contacts on GaN

(9) Pearton, S J a Donovan, S M a Abernathy, C R a Ren, F a Zolper, J C b Cole, M W c Zeitouny, A d Eizenberg, M d Shul, R J e

a UNIVERSITY OF FLORIDA (United States)

b OFFICE OF NAVAL RESEARCH (United States)

c U S ARMY RESEARCH LABORATORY (United States)

d TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

e SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; ELECTRIC CONTACTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; ION IMPLANTATION; METALLIZING; OHMIC CONTACTS; SILICON WAFERS;

ANNEALED MATERIALS; ANNEALING TREATMENTS; CONTACT MORPHOLOGY; CRYSTALLINE DEFECTS; GRADED COMPOSITION; HIGH DEFECT DENSITIES; NON-UNIFORM DOPING; TEMPERATURE STABLE;

INDIUM ALLOYS;

EID: 0347515545 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/HITEC.1998.676807 Document Type: Conference Paper

Times cited : (2)

References (9)

1
- 0029754959
- Q. Chen, J. W. Yang, R. Gaska, M. A. Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgings, A. T. Ping and I. Adesida, IEEE Trans. Electron. Dev. Lett. EDL-l9, 44 (1998).
- (1998) IEEE Trans. Electron. Dev. Lett. EDL-l9 , vol.44
- Chen, Q.¹ Yang, J.W.² Gaska, R.³ Khan, M.A.⁴ Shur, M.S.⁵ Sullivan, G.J.⁶ Sailor, A.L.⁷ Higgings, J.A.⁸ Ping, A.T.⁹ Adesida, I.¹⁰

2
- 85054589555
- Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. DenBaars and U. K. Mishra, IEEE Trans. Electron Dev. EDL-19, 54 (1998).
- (1998) IEEE Trans. Electron Dev. EDL-19 , vol.54
- Wu, Y.-F.¹ Keller, B.P.² Fini, P.³ Keller, S.⁴ Jenkins, T.J.⁵ Kehias, L.T.⁶ DenBaars, S.P.⁷ Mishra, U.K.⁸

3
- 5244252536
- M. W. Cole, D. W. Eckart, W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. Stall, S. J. Pearton, Y. Li and J. Lee, J. Appl. Phys. 80, 278(1996).
- (1996) J. Appl. Phys. , vol.80 , pp. 278
- Cole, M.W.¹ Eckart, D.W.² Han, W.Y.³ Pfeffer, R.L.⁴ Monahan, T.⁵ Ren, F.⁶ Yuan, C.⁷ Stall, R.⁸ Pearton, S.J.⁹ Li, Y.¹⁰ Lee, J.¹¹

4
- 0029305521
- CR. Abernafhy, Mat. Sci. Eng. Rep. 14, 203 (1995).
- (1995) Mat. Sci. Eng. Rep. , vol.14 , pp. 203
- Abernafhy, C.R.¹

5
- 0031246719
- M. W. Cole, F. Ren and S. J. Pearton, J. Electrochem. Soc. 144, L275 (1997).
- (1997) J. Electrochem. Soc. , vol.144 , pp. L275
- Cole, M.W.¹ Ren, F.² Pearton, S.J.³

6
- 0003944184
- ed. S. J. Pearton, Gordon and Breach
- J. C. Zolper, in GaN and Related Materials, ed. S. J. Pearton (Gordon and Breach, 1997).
- (1997) GaN and Related Materials
- Zolper, J.C.¹

7
- 0344112527
- CR. Abernathy, J. D. MacKenzie, R. J. Shul, A. Howard and J. S. Williams, ECS Proc. Vol. 95-21. 1 (1995).
- (1995) ECS Proc. , vol.95 , Issue.21 , pp. 1
- Abernathy, C.R.¹ MacKenzie, J.D.² Shul, R.J.³ Howard, A.⁴ Williams, J.S.⁵

8
- 0012938192
- A. Durbha, S. J. Pearton, CR. Abernathy, J. W. Lee, P. H. Holloway and F. Ren, J. Vac. Sci. Technol. B14, 2582 (1996).
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2582
- Durbha, A.¹ Pearton, S.J.² Abernathy, C.R.³ Lee, J.W.⁴ Holloway, P.H.⁵ Ren, F.⁶

9
- 0344975192
- F. Ren, S. J. Pearton, CR. Abernathy and M. W. Cole, ECS Proc. Vol. 96-11. 122 (1996).
- (1996) ECS Proc. , vol.96 , Issue.11 , pp. 122
- Ren, F.¹ Pearton, S.J.² Abernathy, C.R.³ Cole, M.W.⁴

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