A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

Journal of Electronic Materials

Volumn 32, Issue 11, 2003, Pages 1317-1321

  Rajagopalan, G ^a   Reddy, N S ^a   Ehsani, H ^a   Bhat, I B ^a   Dutta, P S ^a   Gutmann, R J ^a   Nichols, G ^b   Sulima, O ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b LOCKHEED MARTIN   (United States)

^c Astro Power Inc   (United States)

Author keywords

GaSb; Thermophotovoltaic device; Zn diffusion

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ETCHING; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY;

GALLIUM ANTIMONIDE; SINGLE STEP DIFFUSION; THERMOPHOTOVOLTAIC CELLS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0347477201     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0029-y     Document Type: Article

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