Using sulfide treatment to improve performance of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures for spectral range, of 1.7-2.5 μm

ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems

Volumn 1998-October, Issue , 1998, Pages 155-158

  Andreev, I A ^a   L'Vova, T V ^a   Mikhailova, M P ^a   Kunitsyna, E V ^a   Soldv'Ev, V A ^a   Yakovlev, Y P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ETCHING; GALLIUM COMPOUNDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; LATTICE MISMATCH; MICROSYSTEMS; PASSIVATION; PHOTODIODES; SODIUM ALLOYS; SODIUM SULFIDE; SULFUR COMPOUNDS;

ETCHING PROCESS; ETCHING RATE; IMPROVE PERFORMANCE; REVERSE DARK CURRENTS; SPECTRAL RANGE; SULFIDE TREATMENT; TECHNOLOGICAL CONDITIONS; WATER SOLUTIONS;

GALLIUM ALLOYS;

EID: 84960206919     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.1998.730187     Document Type: Conference Paper

References (4)

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3. I.A. Andreev, M.A. Afrailov, A.N. Baranov, V.G. Danirchenko, M.A. Mirsagatov, M.P. Mikhailova, Yu.P. Yakovlev, Sov. TechPhys. Lett. 12(11), 542, 1986.
4. P.S. Dutta, K.S. Sangunni, H.L. Bhat, Appl. Phys. Lelt., 65 (13), 1695, 1994.