Growth-induced defects in AlN/GaN superlattices with different periods

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1129-1132

  Valcheva, E ^a   Paskova, T ^a   Radnoczi, G Z ^a   Hultman, L ^a   Monemar, B ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Extended defects; Nitrides; Superlattices; TEM

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL RELAXATION; COALESCENCE; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

EXTENDED DEFECTS; SURFACE MOBILITY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0347316521     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.175     Document Type: Conference Paper

References (3)

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3. Bykhovski A.D., Gelmont B.L., Shur M.S. J. Appl. Phys. 81:1997;6332.