Polytype Inclusions and Triangular Stacking Faults in 4H-SiC Layers Grown by Sublimation Epitaxy

Physica Scripta T

Volumn 79, Issue , 1999, Pages 64-66

  Syvajarvi M ^a   Yakimova, R ^a   Henry, A ^b   Janzen E ^b  

^a Outokumpu Semitronic   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347309302     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)

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8. Mutaftschiev, B., "Nucleation", ch. 2, in "Crystal growth in science and technology" (Edited by H. Arend and J. Hulliger), NATO ASI Series B210 (Plenum Press, New York 1989).
9. Choyke, W. J., Feng, Z. C. and Powell, J. A., J. Appl. Phys. 64, 3163 (1988).