Ferroelectric neuron circuits with adaptive-learning function

Computers and Electrical Engineering

Volumn 23, Issue 6, 1997, Pages 431-438

  Ishiwara, H ^a   Aoyama, Y ^a   Okada, S ^a   Shimamura, C ^a   Tokumitsu, E ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Adaptive learning; Ferroelectric material; Metal ferroelectric semiconductor FET (MFSFET); Neuron circuit; PZT; Si; Silicon on insulator (SOI)

Indexed keywords

EID: 0347247602     PISSN: 00457906     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0045-7906(97)00029-3     Document Type: Article

References (8)

1. Ishiwara, H., Proposal of adaptive-learning neuron circuits with ferroelectric analog memory weights. Japanese Journal of Applied Physics, 1993, 32, 442-446.
2. 3-covered Si substrates. Japanese Journal of Applied Physics, 1995, 34, 5202-5206.
3. Ishibashi, Y. and Takagi, Y., Note on ferroelectric domain switching. Journal of the Physics Society of Japan, 1971, 31, 506-510.
4. 3 (PZT) films. Japanese Journal of Applied Physics, 1995, 34, 1061-1065.
5. Sze, S. M., Physics of Semiconductor Devices. Wiley, New York, 1969, pp. 310-315.
6. Yoon, S.-M., Kurita, Y., Tokumitsu, E. and Ishiwara, H., Electrical characteristics of neuron pulse oscillation circuits using complementary unijuction transistors and MOSFETs. Japanese Journal of Applied Physics, 1998, 37, No. 3B (in press).
7. Tokumitsu, E., Nakamura, R. and Ishiwara, H., Non-volatile metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structure. Extended Abstracts of 1996 International Conference on Solid State Devices and Materials, Yokohama, 1996, 845-847.
8. Tokumitsu, E., Nakamura, R. and Ishiwara, H., Fabrications of ferroelectric-gate field-effect-transistors using P(L)ZT films. Journal of the Korean Physical Society, 1996, 29, S640-S643.